insulated gate bipolar transistor (warp 2 speed igbt), 100 a GA100NA60UP vishay semiconductors document number: 94543 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 features ? ultrafast: optimized for minimum saturation voltage and speed 0 to 40 khz in hard switching, > 200 khz in resonant mode ? very low conduction and switching losses ? fully isolated package (2500 v ac/rms) ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial market benefits ? designed for increased operating efficiency in power conversion: pfc, ups, smps, welding, induction heating ? lower overall losses av ailable at frequencies ? 20 khz ? easy to assemble and parallel ? direct mounting to heatsink ? lower emi, requires less snubbing ? plug in compatible with other sot-227 packages product summary v ces 600 v i c dc 100 a v ce(on) at 100 a, 25 c 1.8 v sot-227 absolute maximum ratings parameter symbol test conditions max. units collector to emitte r breakdown voltage v ces 600 v continuous coll ector current i c t c = 25 c 100 a t c = 100 c 50 pulsed collector current i cm 200 clamped inductive load current i lm repetitive rating: v ge = 20 v; pulse width limited by maximum junction temperature (fig. 20) 200 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 minute 2500 maximum power dissipation p d t c = 25 c 250 w t c = 100 c 100 operating junction and storage temperature range t j , t stg - 55 to + 150 c mounting torque 6 to 32 or m3 screw 12 (1.3) ibf in (n m) thermal and mechanical specifications parameter symbol typ. max. units junction to case, igbt r thjc -0.50 c/w thermal resistance, junction to case, diode r thjc -1.0 case to sink, flat, greased surface r thcs 0.05 - weight of module 30 - g www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94543 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a v ge = 0 v, i c = 1.0 ma 600 - - v temperature coeffecient of breakdown voltage ? v (br)ces ?? t j -0.36 - v/c collector to emitter satura tion voltage v ce(on) v ge = 15 v, i c = 50 a see fig. 1, 4 - 1.49 2.1 v v ge = 15 v, i c = 100 a - 1.80 - v ge = 15 v, i c = 50 a, t j = 150 c - 1.47 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 250 a - - 7.6 - mv/c forward transconductance g fe v ce = 100 v, i c = 50 a 34 52 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 1.3 ma diode forward voltage drop v fm i c = 50 a see fig. 12 -1.31.6 v i c = 50 a, t j = 150 c - 1.16 1.3 gate to emitter leakage current i ges v ge = 20 v - - 100 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 50 a v cc = 400 v v ge = 15 v see fig. 7 - 430 640 nc gate emitter charge (turn-on) q ge -4872 gate collector charge (turn-on) q gc - 130 190 turn-on delay time t d(on) t j = 25 c i c = 60 a, v cc = 480 v v ge = 15 v, r g = 5.0 ?? energy losses include tail and diode reverse recovery -57 - ns rise time t r -80 - turn-off delay time t d(off ) - 240 - fall time t f - 120 - turn-on switching loss e on -0.41 - mj turn-off switching loss e off -2.51 - total switching loss e ts - 2.92 4.4 turn-on delay time t d(on) e tot t j = 150 c i c = 60 a, v cc = 480 v v ge = 15 v, r g = 5.0 ?? energy losses include tail and diode reverse recovery -57 - ns rise time t r -80 - turn-off delay time t d(off) - 380 - fall time t f - 170 - total switching loss e ts -4.78 - mj internal emitter inductance l e -2.0 - nh input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz see fig. 6 - 7400 - pf output capacitance c oes - 730 - reverse transfer capacitance c res -90 - diode reverse recovery time t rr t j = 25 c see fig. 13 i f = 50 a v r = 200 v di/dt = 200 a/s - 90 140 ns t j = 125 c - 120 180 diode peak reverse recovery current i rr t j = 25 c see fig. 14 -7.311 a t j = 125 c - 11 16 diode reverse recovery charge q rr t j = 25 c see fig. 15 - 360 550 nc t j = 125 c - 780 1200 diode peak rate of fall recovery during t b di (rec)m /dt t j = 25 c see fig. 16 - 370 - a/s t j = 125 c - 220 - www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 94543 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics fig. 3 - maximum collector current vs. case temperature fig. 4 - typical collecto r to emitter voltage vs. junction temperature fig. 5 - maximum effective transient thermal impedance, junction to case 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c ? v = 15v 20 s pulse width ge ? t = 25 c j ? t = 150 c j 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5.0 6.0 7.0 8.0 9.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc ? t = 25 c j t = 150 c j 25 50 75 100 125 150 0 20 40 60 80 100 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce ? v = 15v 80 us pulse width ge ? i = a 100 c ? i = a 50 c ? i = a 25 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94543 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 6 - typical capacitance vs. collector to emitter voltage fig. 7 - typical gate charge vs. gate to emitter voltage fig. 8 - typical switching losses vs. gate resistance fig. 9 - typical switching losses vs. junction temperature fig. 10 - typical switching losses vs. collector to em itter current fig. 11 - turn-off soa 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e gc , ce res g c oes ce g c ? c ies c oes c res 0 100 200 300 400 500 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 50a cc c 0 10 20 30 40 50 r g , gate resistance ( ) 2 4 6 8 10 ) j m ( s e s s o l g n i h c t i w s l a t o t v cc = 480v v ge = 15v t j = 25c i c = 60a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 100 ) j m ( s e s s o l g n i h c t i w s l a t o t r g = 5.0 v ge = 15v v cc = 480v i c = 120a i c = 60a i c = 30a 20 40 60 80 100 i c , collector current (a) 0 2 4 6 8 10 12 ) j m ( s e s s o l g n i h c t i w s l a t o t r g = 5.0 tj = 150c v ge = 15v v cc = 480v 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o ? safe operating area v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 94543 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 12 - typical forward voltage drop vs. instantaneous forward current fig. 13 - typical reverse recovery vs. di f /dt fig. 14 - typical recovery current vs. di f /dt fig. 15 - typical stored charge vs. di f /dt 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 fm t = 150c t = 125c t = 25c j j j forward voltage drop - v (v) instantaneous forward current - i f (a) trr- (nc) 0 30 60 90 120 150 0 0 0 1 0 0 1 f di /dt - ( a/ s ) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j irr- ( a) 1 10 100 0 0 0 1 0 0 1 f di /dt - ( a/ s ) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j qrr- (nc) 0 1000 2000 3000 4000 0 0 0 1 0 0 1 f di /dt - ( a/ s ) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94543 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 16 - typical di (rec)m /dt vs. di f /dt fig. 17a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 17b - test waveforms for circuit of fig. 17a, defining e off , t d(off) , t f fig. 17c - test waveforms for circuit of fig. 17a, defining e on , t d(on) , t r di (rec) m/dt- (a /s) 100 1000 10000 0 0 0 1 0 0 1 f di /dt - (a/s) i = 100a i = 50a i = 25a f f f v = 200v t = 125c t = 25c r j j d.u.t. 430 f 80 % of v ce same type device as d.u.t. t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge t2 v ce i c dt t1 5 % v ce i c i pk v cc 10 % i c vce t1 t2 d.u.t. voltage and current gate voltage d.u.t. + v g 10 % + v g 90 % i c tr t d (on) eon = www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP insulated gate bipolar transistor (warp 2 speed igbt), 100 a vishay semiconductors document number: 94543 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 fig. 17d - test waveforms for circuit of fig. 17a, defining e rec , t rr , q rr , i rr fig. 17e - macro waveforms for figure 17a's test circuit fig. 18a - clamped inductive load test circuit fig. 18b - pulsed collector current test circuit diode reverse recovery energy tx e rec = t4 v d i c dt t3 t4 t3 diode recovery waveforms i c v pk 10 % v cc i rr 10 % i rr v cc t rr q rr = t rr i c dt tx v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 50 v 6000 f 100 v 1000 v v c * l d.u.t. r l = 480 v 4 x i c at 25 c 0 - 480 v www.datasheet.co.kr datasheet pdf - http://www..net/
GA100NA60UP vishay semiconductors insulated gate bipolar transistor (warp 2 speed igbt), 100 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94543 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - device: 2 - silicon technology: 3 - current rating (100 = 100 a) 4 - n = high side chopper 5 - sot-227 6 - voltage rating (60 = 600 v) 7 - u = ultrafast with matching diode 8 - none = standard production p = lead (pb)-free a = generation 4 igbt, generation 2 hexfred ? g = igbt device code 5 13 24 678 g a 100 n a 60 u p 1 2 3 4 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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